IEEE PVSC 49
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SPLTRAK Abstract Submission
Unlocking 1550 nm Laser Power Conversion by InGaAs Single- and Multi-Junction PV Cells
Henning Helmers, Oliver Höhn, Thomas Tibbits, Meike Schauerte, H. M. Noman Amin, David Lackner
Fraunhofer Institute for Solar Energy Systems ISE, Freiburg, Germany

Photovoltaic cells based on In0.53Ga0.47As absorber material grown lattice-matched on InP substrates are developed, targeting laser power conversion around 1550 nm in the optical C‑band. Single- and multi-junction devices are fabricated and characterized. In addition, a thin film route which allows for the implementation of a back surface reflector is developed based on wet-chemical etching of the InP substrate. The influence of the junction type (homo-, front-hetero-, rear-heterojunction) on luminescence coupling in 2-junction devices is explored. Also, a first 10-junction device is investigated. First experimental results will be presented in this conference contribution.