IEEE PVSC 49
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SPLTRAK Abstract Submission
STUDY OF THE TRANSIENT REGIME IN A SILICON PHOTOCELL WITH VERTICAL JUNCTION SERIAL UNDER MAGNETIC FIELD AND CONSTANT MULTISPECTRAL ILLUMINATION
Papa Monzon alassane Samake, Papa Touty Traore, pape Diop, Babou Dione , Fatimata Ba, Modou Pilor
Universite Cheikh Anta Diop, Dakar, Senegal

This work is a study of the transient decrease obtained between two operating points on the current-voltage characteristic of a series vertical junction silicon solar cell placed under a magnetic field and under constant multispectral illumination. The magneto-transport equation relating to the density of excess minority carriers in the base of the solar cell is studied in transient state by the Sturn-Louiville method, taking into account the recombination speeds (Sf) and (Sb) respectively at the junction (n+/p) and on the rear face (p/p+). The time constant (c) and the initial instant (t0) of the exponential decay of the charge carrier density are analyzed through the thickness of the base.