SPLTRAK Abstract Submission
On the Effect of Indium Chloride Dose on the Recrystallization of Cu(In,Ga)Se2 Thin Films and associated Devices
Adam Masters1, Deewakar Poudel1, Benjamin Belfore1, Elizabeth Palmiotti2, Angus Rockett2, Sylvain Marsillac1
1Virginia Institute of Photovoltaics, Old Dominion University, Norfolk, VA, United States
/2Dept. of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO, United States

Cu(In,Ga)Se2 thin films deposited by a single-stage co-evaporation process at 350 ºC on molybdenum coated soda lime glass substrate were annealed post-deposition in InCl3 vapor. The amount of InCl3 and Se was varied. The annealing treatment was done at 450 ºC for 30 minutes. Increase in grain size was observed after the treatment in all cases by X-ray diffraction. Device performance was low, but improved slightly after KCN etching.