IEEE PVSC 49
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SPLTRAK Abstract Submission
Low Threading Dislocations in Ge-on-Silicon Virtual Substrate
Reem H. Ahmed1, Mohamed H. Hamza1, Laila Mekkawy2, Touka Shalpy2, Ahmed. A. El-Dehab2, Tarek M. Hatem1,2, Salah Bedair3
1Centre for Simulation Innovation and Advanced Manufacturing, the British University in Egypt, El-Sherouk City, Cairo 11837, Egypt
/2Faculty of Energy and Environmental Engineering, the British University in Egypt, El-Sherouk City, Cairo 11837, Egypt
/3Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC, United States

Sintering of porous Ge/Si films produces high-quality germanium (Ge) epilayers on silicon (Si) with low threading dislocations-density. In the current study, the simulation of a representative volume element (RVE) of the Ge thin-film grown onto Si (001) surface using a microstructure-based multiple slip crystal plasticity model combined with finite element analysis replicates the experimental approach. As a result, numerical simulations predicts that threading-dislocations propagation will stop at the embedded voids layer, as the result show decrease in stress. Moreover, this study aims to enhance the efficiency of semiconductor by eliminating damaging interface dislocations in the semiconductor active carriers' layer.