IEEE PVSC 49
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SPLTRAK Abstract Submission
Rapid Thermal Annealing (RTA) of Hydrogenated Poly-Si under Air and Nitrogen and Blister Formation
Arpan Sinha1, Sagnik Dasgupta2, Ajeet Rohatgi2, Mool Gupta1
1University of Virginia, Charlottesville, VA, United States
/2Georgia Inst. of Tech., Atlanta, GA, United States

The high-efficiency poly-Si-based TOPCon cells are getting significant attention in the global PV market. Thermal annealing is an important fabrication step for poly-Si crystallization, passivation, and dopant activation. We investigated rapid methods of annealing using RTA and laser at different temperature regimes under N2 and air atmosphere. The surface morphology, degree of crystallization, and passivation were studied using SEM, Raman, and photoluminescence methods. Extensive formations of blisters under N2 conditions were observed while very low blister density under air annealing, indicating atmosphere dependence. High photoluminescence was observed after air annealing and forming gas treatment for boron-doped Si.