IEEE PVSC 49
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SPLTRAK Abstract Submission
Impact of Strain, Annealing, and Hydrogenation on Epitaxial GaNP Grown on Si
Chaomin Zhang1, Hadi Afshari2, Nicholas P. Irvin1, Srinath Murali1, Daniel P. Petit2, Martha McCartney1, David Smith1, Ian R. Sellers2, Richard King1, Christiana B. Honsberg1
1Arizona State University, TEMPE, AZ, United States
/2University of Oklahoma, Norman, OK, United States

GaNP is a promising top junction material for Si-based tandem solar cells because the nitrogen concentration can be varied to tune the alloy’s lattice-constant and bandgap. Lattice matching with Si is achieved at GaN0.02P0.98 at room temperature. However, due to differences in the thermal expansion coefficient between GaNP and Si, a higher nitrogen concentration would be needed to achieve lattice matching during growth, which occurs around 600°C. In this work, the structural and optical properties of GaNP with varying N-concentrations are studied. The highest peak-to-peak photoluminescence was found for a compressively strained alloy at GaN0.017P0.983. Currently, this comparison is being expanded to include the effects of post-growth annealing and hydrogenation as well as strain on GaNP photoluminescence.