IEEE PVSC 49
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SPLTRAK Abstract Submission
Development of a co-anneal process for double-side TOPCon precursor fabricated by ex-situ POCl3 and APCVD boron diffusion
Wook-Jin Choi1, Young-Woo Ok1, Keeya Madani1, Shubham Duttagupta2, Ajeet Rohatgi1
1Georgia Institute of Technology, Atlanta, GA, United States
/2Solar Energy Research Institute of Singapore, 7 Engineering Drive 1, Singapore

The aim of this study was to develop a simple and industrially attractive co-anneal process to fabricate a high-quality DS-TOPCon precursor with textured n-TOPCon on front and planar p- TOPCon on rear by ex-situ POCl3 and APCVD boron diffusion. This requires only one high temperature anneal with no additional masking steps. Excellent iVOC of 733mV and iFF of ~86% were achieved after SiNX passivation on both sides, prior to contact firing. Our device modeling projects that this precursor in combination with a manufacturing-friendly poly-Si patterning technique on front can enable > 25% DS-TOPCon cells at low-cost.