IEEE PVSC 49
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SPLTRAK Abstract Submission
Vapor Treatment for Growth of High-Quality Oxide Barriers within P-I-N Perovskite Solar Cells and Tandems
Samuel A. Johnson1, Michael D. McGehee1, Joseph J. Berry1,2, Axel F. Palmstrom2
1University of Colorado, Boulder, CO, United States
/2National Renewable Energy Laboratory, Golden, CO, United States

We investigate oxide growth on fullerene (C60) by atomic layer deposition (ALD) for C60/oxide bilayer electron selective contacts in P-I-N perovskite solar cells. A key inhibitor to the formation of high-quality oxide barriers on C60, despite the dense, conformal nature of ALD-grown materials, is the poor reactivity of the fullerene surface. This leads to sub-surface diffusion and exothermic growth and, in turn, low-quality oxide barriers. We demonstrate an in-situ vapor-phase approach to enhance the activity of the fullerene surface and fill pinholes within ultra-thin oxide films for high-quality oxide barriers on top of perovskite absorbers in P-I-N solar cells.