SPLTRAK Abstract Submission
Properties of Co-Sputtered (InxGa(1-x))2O3  Layers Used in CdTe Solar Cells
Manoj K. Jamarkattel, Adam B. Phillips, Indra Subedi, Abasi Abudulimu, Ebin Bastola, Deng Bing Li, Zhaoning Song, Xavier Matthew, Yanfa Yan, Randy J. Ellingson, Nikolas J. Podraza, Michael J. Heben
Wright Center for Photovoltaic Innovation and Commercailization, University of Toledo, Department of Physics and Astronomy, Toledo, OH, United States

We recently demonstrated that (InxGa1-x)2O3 (IGO) alloys have the potential to be high-performing emitters in CdTe based photovoltaic devices, readily producing devices with efficiencies in excess of 16%. Here we present characterization data for the (InxGa1-x)2O3 (IGO) films as x was varied from 0 to 1.  As grown IGO films exhibited band gaps ranging from 3.3 eV to 4.77 eV and were amorphous and highly resistive. After heating through a temperature profile that would be experienced during CdTe deposition, Hall effect measurements found n-type conductivity and carrier concentrations ranging from 1019 to 1020 cm-3. The best performing solar cell was fabricated with x = 0.36, which showed a bandgap of 4.02 eV, a carrier concentration of 2.5 x 1019 cm-3, and a mobility of 9.1 cm2/V.s. PL measurements showed the brightest emission for this same composition.