IEEE PVSC 49
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SPLTRAK Abstract Submission
Exposing Unencapsulated Silicon Photovoltaic Cells to Environmental Stressors to Accelerate Cycles of Learning
Ina T. Martin1, Nitin K. Chockalingam1, Kehley A. Coleman1, Jeffrie Fina1, Nafis Iqbal2, Kristopher O. Davis2, Laura S. Bruckman1
1Case Western Reserve University, Cleveland, OH, United States
/2University of Central Florida, Orlando, FL, United States

Carrier selective heterostructures have reached record efficiencies for c-Si solar cells by minimizing both recombination and resistive losses, via the incorporation of passivating interlayers and asymmetric charge transport layers. The use of new materials and architectures create performance gains, but also introduce a potential risk of new degradation pathways. Silicon heterojunction (SHJ) cells, in particular, can achieve world record open-circuit voltages by eliminating contact recombination. Here we present materials and device performance data from distinct technologies (PERC and SHJ) subjected to traditional and modified accelerated aging methods. Unencapsulated devices are exposed to accelerated aging conditions to provide information on materials and device changes, separate from the encapsulants, to accelerate cycles of learning in PV reliability and durability. The accelerated aging conditions encompass heat, moisture, UV light, and acidic conditions. Device electrical performance was characterized before and after accelerated aging at discrete time intervals. Further, the ITO and silver gridlines of the SHJ cells were characterized via X-Ray photoelectron spectroscopy (XPS) and optical profilometry to measure changes in elemental composition, binding environments, and surface morphology. Changes in materials and device performance will be correlated and discussed.