SPLTRAK Abstract Submission
Stability of Silicon Heterojunction solar cells having hydrogen plasma treated intrinsic layer
Anishkumar Soman1,2, Gbenga Obikoya1,2, Steve Johnston3, Steven Harvey3, Ujjwal Das2, Steven Hegedus1,2
1Department of Electrical and Computer Engineering, University of Delaware, Newark, DE, United States
/2Institute of Energy Conversion, University of Delaware, Newark, DE, United States
/3National Renewable Energy Laboratory (NREL), Golden, CO, United States

The open-circuit voltage of Silicon Heterojunction (HJ) cells can be improved by using extrinsic hydrogen plasma treatment (HPT) to reduce the trap states (NT) which we have verified using Deep Level Transient Spectroscopy (DLTS). However, hydrogen has been associated with long-term degradation. We have investigated the stability of HJ cells with and without HPT using accelerated degradation (1-sun illumination, 90°C temperature, argon ambient for 1000 hours). The stability has been studied using DLTS, current-voltage, and Suns-VOC. Our results show HPT cells are stable and maintain their higher Voc and lower NT after accelerated degradation.