IEEE PVSC 49
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SPLTRAK Abstract Submission
Front SiON/TCO Stacks Development for Double Side Poly-Si/SiOX Passivated Contacts Solar Cells
Charles Seron1,2, Thibaut Desrues1, Christine Denis1, Raphaël Cabal1, Frédéric Jay1, Adeline Lanterne1, Quentin Rafhay2, Anne Kaminski2, Sébastien Dubois1
1Univ. Grenoble Alpes, CEA, LITEN, Campus INES, 73375 Le Bourget du Lac, France, LE BOURGET DU LAC, France
/2Univ. Grenoble Alpes, Univ. Savoie Mt-Blanc, CNRS, Grenoble INP, IMEP-LAHC, 38000 Grenoble, France, GRENOBLE, France

This work reports on the use of a front side SiON/TCO bilayer in double side poly-Si/SiOX-based passivated contacts solar cells. This approach presents the advantage of a low indium consumption either by reducing the indium-based transparent conductive oxide (TCO) thickness or by enhancing its substitution with a Zinc-based TCO, such as AZO (Aluminum-doped Zinc Oxide). An electrical study with a TCO thickness reduced to 20 nm on textured surfaces has shown excellent responses for SiON/AZO stacks, especially regarding the contact resistivity. The developed SiON/TCO bilayers were finally integrated in complete solar cells. Interestingly, the substitution of the standard 70 nm-thick ITO:H layer by a 20 nm-thick ITO:H film covered by SiON led to an efficiency gain of +0.5% abs. Regarding AZO, the replacement of the standard 70 nm-thick AZO layer by a 20 nm-thick AZO film covered by SiON conducted to a JSC gain of +0.8 mA/cm2. These gains in performances could be raised with further post-treatments still under investigation. However, the current results already confirm the possibility to optimize thin-poly-Si based passivated contacts solar cells towards In-free fabrication processes.