IEEE PVSC 49
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SPLTRAK Abstract Submission
Bulk lifetime study of p-type Czochralski silicon with different processing history using quinhydrone-methanol surface passivation
Tasnim Kamal Mouri1, Ajay Upadhyaya2, Ajeet Rohatgi2, William N Shafarman1, Ujjwal K. Das1
1Institute of Energy Conversion, University of Delaware, Newark, DE, United States
/2School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, United States

Bulk lifetime quality for p-type textured Cz-Si wafers with different thermal processing history were assessed using quinhydrone-methanol (QH-MeOH) surface passivation. The wafer bulk quality quantified by effective carrier lifetime (τeff) and implied voltage (iVoc) depends on the thermal processing of different surface treatment and passivation materials. It was observed that the wafers which had H2S reaction at 550ºC demonstrated higher τeff value of 235 μs and iVoc value of 693 mV implying bulk quality improvement after going through H2S reaction process.