IEEE PVSC 49
Search
SPLTRAK Abstract Submission
Poisson drift diffusion modeling of valley photovoltaic devices
Daixi Xia1, Hassan Allami1, Jacob J. Krich1,2
1Department of Physics, University of Ottawa, Ottawa, ON, Canada
/2School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON, Canada

We present Poisson/drift-diffusion (PDD) modeling of valley photovoltaics (VPV). VPV devices have the potential to enable long-lasting hot carrier populations in satellite valleys of the conduction band, exploiting intervalley scattering effects at high electric field, similar to the Gunn effect. Hot carrier effects are hard to include in quasi-equilibrium PDD models. We present a mapping from the electric-field dependence of valley scattering rates calculated using the ensemble Monte Carlo (EMC) method to an effective electric field. This mapping gives valley scattering rates that agree both with the EMC simulations and also with equilibrium detailed balance. This effective electric field is the key to using the computationally inexpensive PDD modeling for strongly nonequilibrium devices like VPV.