IEEE PVSC 49
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SPLTRAK Abstract Submission
Role of back-side indium tin oxide on the degradation mechanism of silicon heterojunction solar cells
Gbenga D. Obikoya1,2, Anishkumar Soman1,2, Ujjwal K. Das1,2, Steven S. Hegedus1,2
1Institute of Energy Conversion, Newark, DE, United States
/2Department of Electrical and Computer Engineering, Newark, DE, United States

Silicon heterojunction (SHJ) solar cells with only front-side indium tin oxide (ITO) and those with both sides ITO were subjected to accelerated degradation in argon ambient, at temperature of 90oC and illumination intensity of 100mW/cm2. Between 0 and 500 hours of exposure, the cells were removed iteratively for current density-voltage (JV), quantum efficiency (QE) and Suns-VOC measurements. While cells with both sides ITO demonstrated stability in performance after 500 hours of exposure, the cells lacking the rear-side ITO degraded in performance, with an average open-circuit voltage (VOC) loss of about 12% and an average efficiency loss of about 16%.