SPLTRAK Abstract Submission
Thermally evaporated titanium dioxide film as an electron-selective contact for silicon solar cells
Changhyun Lee1, Soohyun Bae1, Hyunju Lee2, Yoonmook Kang3, Hae-Seok Lee3, Donghwan Kim1
1Materials Science and Engineering, Korea University , Seoul, Korea
/2Semiconductor lab, Toyota Technological Institute, Seoul, Japan
/3KU-KIST Green School, Graduate School of Energy and Environment, Korea University, Nagoya, Korea

We conducted research on TiOx to create an electron selective contact structure that does not require a high-temperature heat-treatment process. Titanium metal was deposited by thermal evaporator and an additional oxidation process was conducted to form titanium oxide. The chemical composition and phase of the titanium dioxide layers were analyzed using X-ray diffraction and X-ray photoelectron spectroscopy. Passivation effects of each titanium oxide layer were measured by quasi-steady-state photoconductance. Electron selectivity of titanium oxide layers and band alignment of TiOx/Si was demonstrated by UV photoelectron spectroscopy (UPS) and UV-vis spectroscopy analyses. With this oxidized titanium oxide on the silicon surface, band offsets of the conduction and valence bands were analyzed to confirm the selectivity of the layers.