IEEE PVSC 49
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SPLTRAK Abstract Submission
Comparison Between Reflectance of Laser Texturing and Anisotropic Etched For Texturing Silicon Wafer Surfaces
Nurul Huda Abdul Razak
Universiti Kebangsaan Malaysia, Bangi, Malaysia

Texturing the surface of crystalline silicon solar cells is essential to achieving high conversion efficiency. This is due to the fact that light reflection from the surface is a major role in limiting efficiency. More than three-quarters of the time, polished silicon surfaces reflect at least 34%. As a result, in order to build high-efficiency solar cells, surface texturing is required in order to increase the cells' ability to trap and absorb photons. Silicon wafer surfaces may be textured using a variety of methods. Pulsed Nd:YAG lasers are employed in this study as an alternative to acidic and alkaline etching for texturing. Silicon wafer surfaces may be processed more quickly and easily with the pulsed Nd:YAG laser. Thus, there is no waste or pollution generated by this method. Laser texturing has certain drawbacks, one of which is that if the laser texturing damage layer is not removed, it might impair the efficiency of solar cells. KOH (20%) is used to eliminate the laser damage layer. A comparison of wet chemical etching with laser texturing on crystalline silicon wafer surfaces was also made in this article. When compared to wet chemical etching, which has a reflectance of 15%, laser texturing achieves a reflectance below 10%, as illustrated by data from a UV-Vis Spectrophotometer. As a result, laser texturing outperforms wet chemical etching when it comes to decreasing reflectivity on crystalline silicon wafer surfaces.