IEEE PVSC 49
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SPLTRAK Abstract Submission
Study of ALD-grown Tin Oxide as an Electron Selective Layer for NIP Perovskite-Based Solar Cells  
Félix Gayot1, Elise Bruhat1, Matthieu Manceau1, Eric De Vito2, Denis Mariolle3, Stéphane Cros1, Charles Seron1
1Univ. Grenoble Alpes, INES - CEA Liten, Department of Solar Technologies, Le Bourget du Lac, France
/2Univ. Grenoble Alpes, CEA Liten, Department of Nanomaterial technologies, Grenoble, France
/3Univ. Grenoble Alpes, CEA, Leti, Grenoble, France

Lower performances are usually recorded for perovskite and silicon/perovskite tandem solar cells that use tin oxide (SnO2) grown by Atomic Layer Deposition (ALD) as an electron selective layer instead of commonly used solution-processed SnO2. This work attempts to determine possible causes for such limitations. A comparative study on chemical, electrical, optical and topographical properties of ALD-grown SnO2 and solution-processed SnO2 thin films is presented as well as on their integration in perovskite-based solar cells. This study points out the SnO2/perovskite interface as the main performance-limiting element. Specifically, a larger workfunction for ALD-grown SnO2 may create a potential barrier for electron extraction at PK interface.