IEEE PVSC 49
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SPLTRAK Abstract Submission
Evaluation of Auger Limited Behavior inThermoradiative Cells
Jamie D Phillips
University of Delaware, Newark, DE, United States

The impact of Auger recombination on thermoradiative cell power density and power conversion efficiency are investigated with simulations based on realistic recombination rates for narrow bandgap semiconductor materials. Thermoradiative cell performance will likely be intrinsically limited by non-radiative Auger recombination that will suppress radiative emission from the cell. The radiative and non-radiative Auger recombination rates are estimated for a range of material bandgap energies and cell temperatures using the "ABC model". A crossover point occurs between radiatively and Auger limited cell performance that determines the minimum bandgap energy and corresponding  maximum intrinsic carrier density. Calculations are made using HgCdTe as a representative bulk narrow bandgap material that spans the full range of infrared with well established temperature dependent models for material parameters. The analysis suggests that the maximum power conversion efficiency is constrained to approximately 7%, with a weak dependence on cell temperature. Similarly, the maximum power density that may be produced in a thermoradiative cell is constrained at approximately the crossover point between radiative and Auger limited behavior. This work is expected to serve as a basis to set realistic expectations for thermoradiative cell performance for bulk semiconductor materials, and to highlight the importance of suppressing Auger recombination rates as perhaps the most critical need for improving thermoradiative cells.